Number of hours
- Lectures 14.0
- Projects -
- Tutorials 14.0
- Internship -
- Laboratory works 28.0
ECTS
ECTS 5.0
Goal(s)
Explain the physical phenomenon in power semiconductor devices
Explain physical interactions in the packages of power electronics semiconductor devices
Understand switching waveforms of power electronics semiconductor devices
Explain interactions between gate drivers and power electronics switches
Responsible(s)
Pierre LEFRANC
Content(s)
1. Semiconductors devices
• solid-state physics : introduction, principles, basics, modelling, comparaison
• Si, SiC, GaN : comparaisons
2. Power switches
• classical power switches : from silicon to power switches (MOSFET & IGBT)
• static and dynamic behavior (MOSFET & IGBT)
• new components : SiC-MOSFET & HEMT-GaN (switching speed, breakdown voltage)
3. Gate drivers
• gate drivers functions : signal & power transmissions, buffer, protections
• architectures des gate drivers architectures and common mode current, series-connection
4. Switching cell
• electrical behavior of a switching cell : modelling
• parasitic elements of the layout
• sizing and modelling of the passive components
« Power electronics » IEE2
« Materials for electrical engineering » IEE2
Test
Continuous Assessment (CC1) : report of practical work
Final examination (ET1) : 2 hours
The exam is given in english only 
Calendar
The course exists in the following branches:
- Curriculum - Master inter SGB - Semester 9 (this course is given in english only
) - Curriculum - Master's Degree in Engineering IEE - Semester 9 (this course is given in english only )
Additional Information
Course ID : 5EU9PES9
Course language(s):
You can find this course among all other courses.
Bibliography
Fundamentals of Power Semiconductor Devices - Baliga
Introduction to Electromagnetic Compatibility - Whiley and son - Paul
French State controlled Master's degree
