Power Electronics Semiconductor Devices - 5EU9PES9

Goal(s)

Explain the physical phenomenon in power semiconductor devices
Explain physical interactions in the packages of power electronics semiconductor devices
Understand switching waveforms of power electronics semiconductor devices
Explain interactions between gate drivers and power electronics switches

Responsible(s)

Pierre LEFRANC

Content(s)

1. Semiconductors devices
• solid-state physics : introduction, principles, basics, modelling, comparaison
• Si, SiC, GaN : comparaisons

2. Power switches
• classical power switches : from silicon to power switches (MOSFET & IGBT)
• static and dynamic behavior (MOSFET & IGBT)
• new components : SiC-MOSFET & HEMT-GaN (switching speed, breakdown voltage)

3. Gate drivers
• gate drivers functions : signal & power transmissions, buffer, protections
• architectures des gate drivers architectures and common mode current, series-connection

4. Switching cell
• electrical behavior of a switching cell : modelling
• parasitic elements of the layout
• sizing and modelling of the passive components

« Power electronics » IEE2
« Materials for electrical engineering » IEE2

Test

Continuous Assessment (CC1) : report of practical work
Final examination (ET1) : 2 hours

The exam is given in english only

Calendar

The course exists in the following branches:

• Curriculum - Master inter SGB - Semester 9 (this course is given in english only )
• Curriculum - Master's Degree in Engineering IEE - Semester 9 (this course is given in english only )

Additional Information

Course ID : 5EU9PES9
Course language(s):

You can find this course among all other courses.

Bibliography

Fundamentals of Power Semiconductor Devices - Baliga

Introduction to Electromagnetic Compatibility - Whiley and son - Paul